Typical Characteristics
1.2
1.0
160
140
CURRENT LIMITED
BY PACKAGE
V GS = 10V
120
0.8
0.6
0.4
0.2
100
80
60
40
20
0.0
0
25
50 75 100 125 150
175
0
25
50
75
100
125
150
175
T C , CASE TEMPERATURE ( o C )
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
T C , CASE TEMPERATURE ( o C )
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
P DM
0.1
0.05
0.02
0.01
t 1
t 2
NOTES:
DUTY FACTOR: D = t 1 /t 2
PEAK T J = P DM x Z θ JC x R θ JC + T C
10
10
10
10
10
10
10
0.01
-5
SINGLE PULSE
-4 -3 -2 -1
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
0
1
2000
1000
V GS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T C = 25 o C
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
175 - T C
150
100
10
10
10
10
10
10
10
10
SINGLE PULSE
-5
-4
-3 -2 -1
t, RECTANGULAR PULSE DURATION(s)
0
1
Figure 4. Peak Current Capability
FDD8444 Rev B (W)
4
www.fairchildsemi.com
相关PDF资料
FDD8447L MOSFET N-CH 40V 15.2A DPAK
FDD8451 MOSFET N-CH 40V 9A DPAK
FDD8453LZ MOSFET N-CH 40V 16.4A DPAK
FDD850N10L MOSFET N-CH 100V 15.7A DPAK-3
FDD86102LZ MOSFET N-CH 100V 8A DPAK
FDD86102 MOSFET N-CH 100V 8A DPAK
FDD86110 MOSFET N-CH 100V 12.5A DPAK-3
FDD86113LZ MOSFET N-CH 100V 4.2A DPAK-3
相关代理商/技术参数
FDD8444_06 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 40V, 50A, 5.2mз
FDD8444_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 50A, 5.2m??
FDD8444_F085 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD8444L 功能描述:MOSFET 40V N-Ch POWERTRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD8444L_F085 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD8444L_F085_09 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 50A, 6.0m??
FDD8445 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD8445_07 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mヘ